Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1400A-E 2SK1400A-E

The 2SK1400A-E is a silicon N-channel MOSFET designed for high-speed power switching, housed in a TO-220AB package with dimensions of 10.16 mm x 4.44 mm and a mass of 1.8 g. It has a drain-to-source voltage rating of 350 V, a continuous drain current of 7 A, and a peak pulsed drain current of 28 A. The device features a typical on-resistance of 0.6 Ω at 4 A and 10 V gate-source voltage. Switching times include a rise time of 50 ns and a fall time of 40 ns. The part meets RoHS compliance and is classified under Renesas's 'Standard' quality grade for non-safety-critical applications.