Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1486(Q) 2SK1486(Q)

Description
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037614-2SK1486(Q) Drain to Source Voltage (Vdss): 300 V Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): IRFP4137PBF; IRFB4137PBF; FDA38N30; AUIRFP4409; FDB38N30U; FQA38N30; Popularity: Low Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Shortage Lead Free: Yes RoHS: Compliant Continuous Drain Current (ID): 32 A
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Description
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037614-2SK1486(Q) Drain to Source Voltage (Vdss): 300 V Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): IRFP4137PBF; IRFB4137PBF; FDA38N30; AUIRFP4409; FDB38N30U; FQA38N30; Popularity: Low Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Shortage Lead Free: Yes RoHS: Compliant Continuous Drain Current (ID): 32 A
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1486(Q) - 1037614-2SK1486(Q) - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1486(Q)
1037614-2SK1486(Q)
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1486(Q) 1037614-2SK1486(Q)
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037614-2SK1486(Q) Drain to Source Voltage (Vdss): 300 V Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): IRFP4137PBF; IRFB4137PBF; FDA38N30; AUIRFP4409; FDB38N30U; FQA38N30; Popularity: Low Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Shortage Lead Free: Yes RoHS: Compliant Continuous Drain Current (ID): 32 A

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1037614-2SK1486(Q)
Drain to Source Voltage (Vdss): 300 V
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): IRFP4137PBF; IRFB4137PBF; FDA38N30; AUIRFP4409; FDB38N30U; FQA38N30;
Popularity: Low
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Shortage
Lead Free: Yes
RoHS: Compliant
Continuous Drain Current (ID): 32 A

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1037614-2SK1486(Q)
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1486(Q)
Package Type TO-3; SOT3
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