P-channel enhancement mode FET in a leadless DFN2020MD-6 (SOT1220) surface-mount package measuring 2 mm × 2 mm × 0.65 mm, with side wettable flanks and Trench MOSFET technology, rated for a maximum drain-source voltage of -28 V, continuous drain current of -13 A, and junction temperature up to 175 °C, with a typical on-state resistance of 41 mΩ at -4.5 V gate-source voltage and 25 °C, and qualified to AEC-Q101.
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
BUK4D50-30P/SOT1220/
BUK4D50-30P/SOT1220/
BUK4D50-30P/SOT1220/
| Nexperia B.V. | DigiKey | ODG (Origin Data Global) | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK4D50-30PX | 1727-BUK4D50-30PXTR-ND | BUK4D50-30PX |
| Product Name | 28 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||
| V(BR)DSS | -28 volts | ||
| IDSS | -5000 milliamps | ||
| VGS(off) | 12 volts | ||
| PD | 2.1 milliwatts |
