Nexperia B.V. 28 V, P-channel Trench MOSFET BUK4D50-30PX

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj = 175 °C Low threshold voltage Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
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Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj = 175 °C Low threshold voltage Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
28 V, P-channel Trench MOSFET - BUK4D50-30PX - Nexperia B.V.
Nijmegen, Netherlands
28 V, P-channel Trench MOSFET
BUK4D50-30PX
28 V, P-channel Trench MOSFET BUK4D50-30PX
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj = 175 °C Low threshold voltage Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Extended temperature range Tj = 175 °C
  • Low threshold voltage
  • Side wettable flanks for optical solder inspection
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Trench MOSFET technology
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-BUK4D50-30PXTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK4D50-30PXTR-ND
Single FETs, MOSFETs 1727-BUK4D50-30PXTR-ND
BUK4D50-30P/SOT1220/ SOT1220

BUK4D50-30P/SOT1220/SOT1220

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BUK4D50-30PXDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK4D50-30PXDKR-ND
Single FETs, MOSFETs 1727-BUK4D50-30PXDKR-ND
BUK4D50-30P/SOT1220/ SOT1220

BUK4D50-30P/SOT1220/SOT1220

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BUK4D50-30PXCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK4D50-30PXCT-ND
Single FETs, MOSFETs 1727-BUK4D50-30PXCT-ND
BUK4D50-30P/SOT1220/ SOT1220

BUK4D50-30P/SOT1220/SOT1220

Buy Now Datasheet
Single FETs, MOSFETs - BUK4D50-30PX - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BUK4D50-30PX
Single FETs, MOSFETs BUK4D50-30PX
Single FETs, MOSFETs

Single FETs, MOSFETs

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BUK4D50-30PX 1727-BUK4D50-30PXTR-ND BUK4D50-30PX
Product Name 28 V, P-channel Trench MOSFET Single FETs, MOSFETs Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS -28 volts
IDSS -5000 milliamps
VGS(off) 12 volts
PD 2.1 milliwatts
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