Texas Instruments TPS1120 Dual P-channel Enhancemenent-Mode MOSFET TPS1120DG4

The TPS1120 is a dual p-channel enhancement-mode MOSFET in an 8-pin SOIC package, designed for 3-V or 5-V power distribution in battery-powered systems. It features a maximum gate-to-source threshold voltage of -1.5 V, a typical on-state resistance of 180 mΩ at -10 V gate drive, and provides 2-kV ESD protection per MIL-STD-883C, Method 3015. The device supports an operating junction temperature range of -40°C to 150°C and is characterized for continuous drain current up to 1.5 A at 150°C. The package dimensions and thermal performance are specified for FR4 board mounting with no special thermal considerations.