Texas Instruments High-Performance Analog FET, MOSFET Arrays CSD87313DMS

Description
Mosfet Array 2 N-Channel (Dual) Common Drain 30V Surface Mount 8-WSON (3.3x3.3)
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Description
Mosfet Array 2 N-Channel (Dual) Common Drain 30V Surface Mount 8-WSON (3.3x3.3)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - 296-51020-6-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
296-51020-6-ND
FET, MOSFET Arrays 296-51020-6-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 30V Surface Mount 8-WSON (3.3x3.3)

Mosfet Array 2 N-Channel (Dual) Common Drain 30V Surface Mount 8-WSON (3.3x3.3)

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FET, MOSFET Arrays - 296-51020-2-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
296-51020-2-ND
FET, MOSFET Arrays 296-51020-2-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 30V Surface Mount 8-WSON (3.3x3.3)

Mosfet Array 2 N-Channel (Dual) Common Drain 30V Surface Mount 8-WSON (3.3x3.3)

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FET, MOSFET Arrays - 296-51020-1-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
296-51020-1-ND
FET, MOSFET Arrays 296-51020-1-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 30V Surface Mount 8-WSON (3.3x3.3)

Mosfet Array 2 N-Channel (Dual) Common Drain 30V Surface Mount 8-WSON (3.3x3.3)

Buy Now Datasheet
FET, MOSFET Arrays - CSD87313DMS - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
CSD87313DMS
FET, MOSFET Arrays CSD87313DMS
MOSFET 2 N-CHANNEL 30V 8WSON

MOSFET 2 N-CHANNEL 30V 8WSON

Supplier's Site Datasheet
Singapore
Dual 30V 5.5mOhm MOSFET Transistor
289-CSD87313DMS
Dual 30V 5.5mOhm MOSFET Transistor 289-CSD87313DMS
30V, N ch NexFET MOSFET™, dual common drain SON3x3, 5.5mOhm 8-WSON -55 to 150 Product overview: CSD87313DMS from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 5.5mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 5.5mOhm, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-CSD87313DMS can be used for catalog matching and distributor lookup.

30V, N ch NexFET MOSFET™, dual common drain SON3x3, 5.5mOhm 8-WSON -55 to 150 Product overview: CSD87313DMS from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 5.5mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 5.5mOhm, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-CSD87313DMS can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FETs - Arrays - CSD87313DMS - 806356-CSD87313DMS - Win Source Electronics
Laguna Hills, CA, United States
FETs - Arrays - CSD87313DMS
806356-CSD87313DMS
FETs - Arrays - CSD87313DMS 806356-CSD87313DMS
Manufacturer: Texas Instruments Win Source Part Number: 806356-CSD87313DMS Packaging: Reel Mounting Style: SMD FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 30V Supplier Device Package: 8-WSON (3.3x3.3) Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-PowerWDFN Popularity: Medium Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Gate Charge (Qg) (Maximum) at Vgs: 28nC at 4.5V Input Capacitance (Ciss) (Maximum) at Vds: 4290pF at 15V Vgs(th) (Maximum) at Id: 1.25V at 250μA

Manufacturer: Texas Instruments
Win Source Part Number: 806356-CSD87313DMS
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-WSON (3.3x3.3)
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerWDFN
Popularity: Medium
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Gate Charge (Qg) (Maximum) at Vgs: 28nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 4290pF at 15V
Vgs(th) (Maximum) at Id: 1.25V at 250μA

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CSD87313DMS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CSD87313DMS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CSD87313DMS
MOSFET 2N-CH 30V 8WSON

MOSFET 2N-CH 30V 8WSON

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V, N ch NexFET MOSFETG , dual common drain SON3x3, 5.5mOhm 8-WSON -55 to 150

MOSFET 30V, N ch NexFET MOSFETG , dual common drain SON3x3, 5.5mOhm 8-WSON -55 to 150

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Technical Specifications

  DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 296-51020-6-ND CSD87313DMS 289-CSD87313DMS 806356-CSD87313DMS CSD87313DMS CSD87313DMS
Product Name FET, MOSFET Arrays FET, MOSFET Arrays Dual 30V 5.5mOhm MOSFET Transistor FETs - Arrays - CSD87313DMS Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Package Type 8-PowerWDFN 8-PowerWDFN SOT3
Polarity N-Channel; 2 N-Channel (Dual) Common Drain N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts
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