40V, N ch NexFET MOSFET™, single D2PAK, 1.7mOhm 3-DDPAK/TO-263 -55 to 175 Product overview: CSD18510KTTT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 1.7mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 1.7mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD18510KTTT can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 771868-CSD18510KTTT
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 200A
Family Name: CSD18510KTT
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: DDPAK/TO-263-3
Channel Type Type: N
Drain Source Voltage: 40V
Vgs(th) (Maximum) @ Id: 2.3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 132nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 11400pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 188W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.6 mOhm @ 100A, 10V
Alternative Parts (Cross-Reference): CSD18510KTT;
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
N-Channel 40V 274A (Tc) 250W (Ta) Surface Mount DDPAK/TO-263-3
N-Channel 40V 274A (Tc) 250W (Ta) Surface Mount DDPAK/TO-263-3
N-Channel 40V 274A (Tc) 250W (Ta) Surface Mount DDPAK/TO-263-3
MOSFET N-CH 40V 274A DDPAK
TEXAS INSTRUMENTS - CSD18510KTTT - MOSFET, N-CH, 40V, 274A, TO-263
MOSFET, N-CH, 40V, 274A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:274A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET 40V N-Channel NexFET Power MOSFET
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-CSD18510KTTT | 771868-CSD18510KTTT | 296-45229-6-ND | CSD18510KTTT | 815-CSD18510KTTT | 66AH9441 | CSD18510KTTT |
| Product Name | 40V 1.7mOhm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD18510KTTT | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | TEXAS INSTRUMENTS - CSD18510KTTT - MOSFET, N-CH, 40V, 274A, TO-263 | Mosfet, N-Ch, 40V, 274A, To-263; Transistor Polarity Texas Instruments | MOSFET |
| QG | 132 nC | ||||||
| PD | 188000 milliwatts | 250000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-4, D2PAK (3 Leads + Tab), TO-263AA | TO-3; TO-263 | |||
| Packing Method | Tape Reel; Reel package | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | Tape Reel; Tape & Reel (TR) |
