Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3116B-S19-AY 2SK3116B-S19-AY

The 2SK3116B is an N-channel power MOSFET designed for high-voltage switching applications such as switching power supplies and AC adapters. It is available in TO-220AB and TO-263 packages, with the S19-AY variant using the TO-220AB package. The device has a drain-to-source voltage rating of 600 V, a continuous drain current of 7.5 A, and a maximum on-state resistance of 1.2 Ω at VGS = 10 V. It features a gate charge of 22 nC and supports single avalanche energy up to 37.5 mJ. The MOSFET meets the Standard quality grade for use in consumer and industrial electronics, and is Pb-free per its external electrode construction.