STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - W13NB60 W13NB60

Manufacturer: STMicroelectronics
Win Source Part Number: 054234-W13NB60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 82nC @ 10V
Max Input Capacitance: 2600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 540 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited

MOSFET N-CH 600V 13A TO-247 Product overview: W13NB60 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 13A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-W13NB60 can be used for catalog matching and distributor lookup.