STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU150N3LLH6 STU150N3LLH6

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103996-STU150N3LLH6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 40nC @ 4.5V Max Input Capacitance: 4040pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103996-STU150N3LLH6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 40nC @ 4.5V Max Input Capacitance: 4040pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU150N3LLH6 - 1103996-STU150N3LLH6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU150N3LLH6
1103996-STU150N3LLH6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU150N3LLH6 1103996-STU150N3LLH6
Manufacturer: STMicroelectronics Win Source Part Number: 1103996-STU150N3LLH6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 40nC @ 4.5V Max Input Capacitance: 4040pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1103996-STU150N3LLH6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 40nC @ 4.5V
Max Input Capacitance: 4040pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.3 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-12693-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12693-5-ND
Single FETs, MOSFETs 497-12693-5-ND
N-Channel 30V 80A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)

N-Channel 30V 80A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STU150N3LLH6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STU150N3LLH6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STU150N3LLH6
MOSFET N-CH 30V 80A IPAK

MOSFET N-CH 30V 80A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1103996-STU150N3LLH6 497-12693-5-ND STU150N3LLH6
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU150N3LLH6 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 110000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor - TGF2965-SM - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type QFN
View Details
3 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SA1248S - 855022-2SA1248S - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF1010Z - 1020695-AUIRF1010Z - Win Source Electronics
Specs
Polarity N-Channel; N-Channel
V(BR)DSS 55 volts
PD 140000 milliwatts
View Details
4 suppliers