STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NB50T4 STD3NB50T4

Description
Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1096850-STD3NB50T4 Mounting: SMD (SMT) Power Dissipation: 50 W Rise Time: 8 ns Fall Time: 5 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-252 Alternative Parts (Cross-Reference): STD3NB50T4STD3NB50-T 4; Popularity: Low Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Non-Compliant Min Operating Temperature: -65 °C Element Configuration: Single Continuous Drain Current (ID): 3 A Drain to Source Breakdown Voltage: 500 V Drain to Source Resistance: 2.8 Ω Gate to Source Voltage (Vgs): 30 V
Request a Quote
Description
Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1096850-STD3NB50T4 Mounting: SMD (SMT) Power Dissipation: 50 W Rise Time: 8 ns Fall Time: 5 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-252 Alternative Parts (Cross-Reference): STD3NB50T4STD3NB50-T 4; Popularity: Low Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Non-Compliant Min Operating Temperature: -65 °C Element Configuration: Single Continuous Drain Current (ID): 3 A Drain to Source Breakdown Voltage: 500 V Drain to Source Resistance: 2.8 Ω Gate to Source Voltage (Vgs): 30 V
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NB50T4 - 1096850-STD3NB50T4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NB50T4
1096850-STD3NB50T4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NB50T4 1096850-STD3NB50T4
Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1096850-STD3NB50T4 Mounting: SMD (SMT) Power Dissipation: 50 W Rise Time: 8 ns Fall Time: 5 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-252 Alternative Parts (Cross-Reference): STD3NB50T4STD3NB50-T 4; Popularity: Low Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Non-Compliant Min Operating Temperature: -65 °C Element Configuration: Single Continuous Drain Current (ID): 3 A Drain to Source Breakdown Voltage: 500 V Drain to Source Resistance: 2.8 Ω Gate to Source Voltage (Vgs): 30 V

Manufacturer: STMicroelectronics
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1096850-STD3NB50T4
Mounting: SMD (SMT)
Power Dissipation: 50 W
Rise Time: 8 ns
Fall Time: 5 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-252
Alternative Parts (Cross-Reference): STD3NB50T4STD3NB50-T4;
Popularity: Low
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Non-Compliant
Min Operating Temperature: -65 °C
Element Configuration: Single
Continuous Drain Current (ID): 3 A
Drain to Source Breakdown Voltage: 500 V
Drain to Source Resistance: 2.8 Ω
Gate to Source Voltage (Vgs): 30 V

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1096850-STD3NB50T4
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NB50T4
V(BR)DSS 500 volts
Unlock Full Specs
to access all available technical data