The STB8NM60N is an N-channel 600 V MOSFET from the MDmesh™ II series, designed for high-efficiency switching applications. It is packaged in a D²PAK (TO-263-3) surface-mount format with dimensions of 10.4 mm in width and 9.35 mm in length. The device has a maximum continuous drain current of 7 A at 25 °C and a drain-source on-resistance of 0.56 Ω at 10 V gate bias and 3.5 A drain current. It is rated for a maximum junction temperature of 150 °C, a total power dissipation of 70 W at 25 °C case temperature, and a pulsed drain current of 28 A. The gate charge is 19 nC at 10 V, with an input capacitance of 560 pF at 50 V. The device is 100% avalanche tested and meets ECOPACK® environmental standards, with a lead-free second-level interconnect per JEDEC JESD97.
Win Source Part Number: 1278103-STB8NM60N
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ II
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 70W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-8771-1,497-8771-
Base Product Number: STB8N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | 1278103-STB8NM60N |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
| Polarity | N-Channel |
