STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single STB6N52K3

Description
Win Source Part Number: 1277981-STB6N52K3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperMESH3™ Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 525 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 70W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V Vgs (Max): ±30V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 69 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-11212-2,497-1121 2-1,-497-11212-6,-49 7-11212-2,-497-11212 -1,497-11212-6 Base Product Number: STB6N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1277981-STB6N52K3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperMESH3™ Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 525 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 70W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V Vgs (Max): ±30V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 69 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-11212-2,497-1121 2-1,-497-11212-6,-49 7-11212-2,-497-11212 -1,497-11212-6 Base Product Number: STB6N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277981-STB6N52K3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277981-STB6N52K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277981-STB6N52K3
Win Source Part Number: 1277981-STB6N52K3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperMESH3™ Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 525 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 70W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V Vgs (Max): ±30V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 69 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-11212-2,497-1121 2-1,-497-11212-6,-49 7-11212-2,-497-11212 -1,497-11212-6 Base Product Number: STB6N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277981-STB6N52K3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: SuperMESH3™
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 525 V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Vgs (Max): ±30V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 69 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-11212-2,497-11212-1,-497-11212-6,-497-11212-2,-497-11212-1,497-11212-6
Base Product Number: STB6N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1277981-STB6N52K3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Polarity N-Channel
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