Qorvo 1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor QPD1025L

  • 1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor - QPD1025L - Qorvo
    Qorvo
  • RF FETs, MOSFETs - 2312-QPD1025L-ND - DigiKey
    DigiKey
Description
The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations. Lead-free and ROHS compliant. Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.
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1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor - QPD1025L - Qorvo
Qorvo
Greensboro, NC, United States
1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
QPD1025L
1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor QPD1025L
The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations. Lead-free and ROHS compliant. Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.

The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

For additional information on GaN thermal performance refer to the following application note and video.

Supplier's Site Datasheet
RF FETs, MOSFETs - 2312-QPD1025L-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
2312-QPD1025L-ND
RF FETs, MOSFETs 2312-QPD1025L-ND
1800W, 65V, PRE-MATCHED, 1.0-1.1

1800W, 65V, PRE-MATCHED, 1.0-1.1

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Technical Specifications

  Qorvo DigiKey
Product Category RF Transistors Transistors
Product Number QPD1025L 2312-QPD1025L-ND
Product Name 1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor RF FETs, MOSFETs
Transistor Technology / Material 1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
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