STMicroelectronics 600V 0.3A MOSFET Transistor Q1NK60ZR

Description
MOSFET N-CH 600V 0.3A TO-92 Product overview: Q1NK60ZR from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 0.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 0.3A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-Q1NK60ZR can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 600V 0.3A TO-92 Product overview: Q1NK60ZR from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 0.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 0.3A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-Q1NK60ZR can be used for catalog matching and distributor lookup.
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Suppliers

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Singapore
600V 0.3A MOSFET Transistor
285-Q1NK60ZR
600V 0.3A MOSFET Transistor 285-Q1NK60ZR
MOSFET N-CH 600V 0.3A TO-92 Product overview: Q1NK60ZR from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 0.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 0.3A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-Q1NK60ZR can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 0.3A TO-92 Product overview: Q1NK60ZR from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 0.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 0.3A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-Q1NK60ZR can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - Q1NK60ZR - 062307-Q1NK60ZR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - Q1NK60ZR
062307-Q1NK60ZR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - Q1NK60ZR 062307-Q1NK60ZR
Manufacturer: STMicroelectronics Win Source Part Number: 062307-Q1NK60ZR Packaging: AMMO PACKAGE Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 300mA (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 6.9nC @ 10V Max Input Capacitance: 94pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 15 Ohm @ 400mA, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 062307-Q1NK60ZR
Packaging: AMMO PACKAGE
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 300mA (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 6.9nC @ 10V
Max Input Capacitance: 94pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 15 Ohm @ 400mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 285-Q1NK60ZR 062307-Q1NK60ZR
Product Name 600V 0.3A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - Q1NK60ZR
Polarity N-Channel N-Channel; N-Channel
PD 3000 milliwatts 3000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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