STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - Q1NK60ZR Q1NK60ZR

Manufacturer: STMicroelectronics Win Source Part Number: 062307-Q1NK60ZR Packaging: AMMO PACKAGE Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 300mA (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 6.9nC @ 10V Max Input Capacitance: 94pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 15 Ohm @ 400mA, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance