STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - P9NK65ZFP P9NK65ZFP

Description
Manufacturer: STMicroelectronics Win Source Part Number: 038730-P9NK65ZFP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 6.4A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 41nC @ 10V Max Input Capacitance: 1145pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 038730-P9NK65ZFP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 6.4A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 41nC @ 10V Max Input Capacitance: 1145pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P9NK65ZFP - 038730-P9NK65ZFP - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P9NK65ZFP
038730-P9NK65ZFP
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P9NK65ZFP 038730-P9NK65ZFP
Manufacturer: STMicroelectronics Win Source Part Number: 038730-P9NK65ZFP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 6.4A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 41nC @ 10V Max Input Capacitance: 1145pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 038730-P9NK65ZFP
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 6.4A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 1145pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 038730-P9NK65ZFP
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - P9NK65ZFP
Polarity N-Channel; N-Channel
V(BR)DSS 650 volts
PD 30000 milliwatts
Unlock Full Specs
to access all available technical data