STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - P4NB50 P4NB50

Manufacturer: STMicroelectronics Win Source Part Number: 061000-P4NB50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 3.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 21nC @ 10V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.8 Ohm @ 1.9A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance