Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1658-T1-A 2SK1658-T1-A

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 855381-2SK1658-T1-A Features: 30 V Package: Bulk Part Status: Obsolete Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 95 pct. Supply and Demand Status: Limited Quantity per package: 3000 HTSUS: 8541.21.0095
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 855381-2SK1658-T1-A Features: 30 V Package: Bulk Part Status: Obsolete Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 95 pct. Supply and Demand Status: Limited Quantity per package: 3000 HTSUS: 8541.21.0095
Request a Quote
Datasheet
Datasheet Summary
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The 2SK1658 is an N-channel MOSFET designed for switching applications, driven by a 2.5 V power supply. It comes in an SC-70 (SSP) package with dimensions of 2.1 ± 0.1 mm × 1.25 ± 0.1 mm × 1.0 ± 0.0 mm. The device has a drain-to-source voltage rating of 30 V, a gate-to-source voltage rating of ±7 V, and a continuous drain current of ±100 mA. It dissipated up to 150 mW and operates with a channel temperature limit of 150 °C. The gate leakage current is ±5 nA maximum at ±3.0 V. The on-state resistance is 25 to 45 Ω at VGS = 2.5 V and 18 to 25 Ω at VGS = 4.0 V. The part is classified as Standard quality and meets RoHS requirements. The -T1-A suffix indicates a tape and reel package, consistent with the ordering information.

Datasheet Summary
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The 2SK1658 is an N-channel MOSFET designed for switching applications, driven by a 2.5 V power supply. It comes in an SC-70 (SSP) package with dimensions of 2.1 ± 0.1 mm × 1.25 ± 0.1 mm × 1.0 ± 0.0 mm. The device has a drain-to-source voltage rating of 30 V, a gate-to-source voltage rating of ±7 V, and a continuous drain current of ±100 mA. It dissipated up to 150 mW and operates with a channel temperature limit of 150 °C. The gate leakage current is ±5 nA maximum at ±3.0 V. The on-state resistance is 25 to 45 Ω at VGS = 2.5 V and 18 to 25 Ω at VGS = 4.0 V. The part is classified as Standard quality and meets RoHS requirements. The -T1-A suffix indicates a tape and reel package, consistent with the ordering information.

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1658-T1-A - 855381-2SK1658-T1-A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1658-T1-A
855381-2SK1658-T1-A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1658-T1-A 855381-2SK1658-T1-A
Manufacturer: Renesas Electronics America Win Source Part Number: 855381-2SK1658-T1-A Features: 30 V Package: Bulk Part Status: Obsolete Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 95 pct. Supply and Demand Status: Limited Quantity per package: 3000 HTSUS: 8541.21.0095

Manufacturer: Renesas Electronics America
Win Source Part Number: 855381-2SK1658-T1-A
Features: 30 V
Package: Bulk
Part Status: Obsolete
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 95 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
HTSUS: 8541.21.0095

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 855381-2SK1658-T1-A
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1658-T1-A
Package Type SOT3
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