STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - P12NM60N P12NM60N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 060960-P12NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 30.5nC @ 10V Max Input Capacitance: 960pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 410 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - P12NM60N - 060960-P12NM60N - Win Source Electronics
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 060960-P12NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 30.5nC @ 10V Max Input Capacitance: 960pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 410 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - P12NM60N - 060960-P12NM60N - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P12NM60N
060960-P12NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P12NM60N 060960-P12NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 060960-P12NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 30.5nC @ 10V Max Input Capacitance: 960pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 410 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 060960-P12NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 30.5nC @ 10V
Max Input Capacitance: 960pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 410 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 060960-P12NM60N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - P12NM60N
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 90000 milliwatts
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