Advanced Linear Devices, Inc. PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR ALD212900ASAL

ALD212900ASAL is a dual precision N-channel EPAD™ MOSFET array in an 8-pin SOIC package, designed for ultra-low voltage and nanopower applications. Each device has a zero threshold voltage of 0.00V ±0.01V at IDS=20µA and VDS=0.1V, with a typical offset voltage of 1.8mV. It operates with less than 1nA current and as low as 0.1V supply voltage, featuring a maximum drain-source on resistance of 14Ω at VGS=5.0V and an output current capability to 79mA. The device exhibits high transconductance of 38mmho, low input capacitance of 30pF, and tight temperature tracking with a gate threshold voltage temperature coefficient of -1.7mV/°C. The 8-pin SOIC package measures 4.69mm to 5.00mm in body length, 3.50mm to 4.05mm in width, with a 1.27mm pin pitch. It meets RoHS specifications and is rated for operation from 0°C to +70°C. ESD-sensitive.