SemiQ Inc. FET, MOSFET Arrays GCMX008B120B3H1P

The GCMX008B120B3H1P is a 1200V SiC full-bridge module designed for high-efficiency power conversion in applications such as photovoltaic inverters, battery chargers, and DC-DC converters. It features press-fit terminal connections, a Kelvin source for stable operation, and direct heatsink mounting with an isolated package. The module has a maximum drain-source voltage of 1200 V, continuous drain current of 120 A at TC=25°C, and a junction temperature rating up to 175°C. On-resistance is 8.6 mΩ at 100 A and 18 V gate voltage, with a junction-to-case thermal resistance of 0.28-0.30 °C/W. The package weighs 40 g and complies with RoHS. The isolation voltage is 3000 VAC.