ROHM Semiconductor USA, LLC NPN Low VCE(sat) Transistor + Schottky Barrier Diode US5L10

Description
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
Datasheet
Description
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
Datasheet

Suppliers

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Product
Description
Supplier Links
NPN Low VCE(sat) Transistor + Schottky Barrier Diode - US5L10 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
NPN Low VCE(sat) Transistor + Schottky Barrier Diode
US5L10
NPN Low VCE(sat) Transistor + Schottky Barrier Diode US5L10
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor USA, LLC
Product Category Transistors
Product Number US5L10
Product Name NPN Low VCE(sat) Transistor + Schottky Barrier Diode
Polarity NPN
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