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Qorvo 750 V, 18 mohm SiC FET UJ4SC075018L8S

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750 V, 18 mohm SiC FET - UJ4SC075018L8S - Qorvo
Greensboro, NC, United States
750 V, 18 mohm SiC FET
UJ4SC075018L8S
750 V, 18 mohm SiC FET UJ4SC075018L8S
Qorvo's UJ4SC075018L8S is a 750 V, 18 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Qorvo's UJ4SC075018L8S is a 750 V, 18 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

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Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number UJ4SC075018L8S
Product Name 750 V, 18 mohm SiC FET
Transistor Technology / Material 750 V, 18 mohm SiC FET
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