The UMH9N is a dual NPN complex digital transistor in a UMT6 package, measuring 2.0mm x 2.1mm, with built-in bias resistors (R1 = 10kΩ, R2 = 47kΩ) for simplified inverter and driver circuit design. Each transistor has a maximum collector current of 100mA and a supply voltage rating of 50V, with a total power dissipation of 150mW. The device features thin-film resistors enabling negative biasing and eliminates parasitic effects. It is RoHS compliant and intended for use in interface and driver circuits.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | UMH9N | UMH9N |
| Product Name | NPN+NPN, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) | NPN+NPN Digital transistor(with built-in resistors) |
| Polarity | NPN | NPN |
