30V N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150
MOSFET N-CH 30V 40A/100A 8VSON
Power Field-Effect Transistor, 257A I(D), 30V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel 30V 40A (Ta), 100A (Tc) 3.2W (Ta), 96W (Tc) Surface Mount 8-VSON-CLIP (5x6)
N-Channel 30V 40A (Ta), 100A (Tc) 3.2W (Ta), 96W (Tc) Surface Mount 8-VSON-CLIP (5x6)
N-Channel 30V 40A (Ta), 100A (Tc) 3.2W (Ta), 96W (Tc) Surface Mount 8-VSON-CLIP (5x6)
Manufacturer: Texas Instruments
Win Source Part Number: 083178-CSD17559Q5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.2W (Ta), 96W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON-CLIP (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 40A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 1.7V @ 250μA
Max Gate Charge: 51nC @ 4.5V
Max Input Capacitance: 9200pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.15 mOhm @ 40A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
MOSFET 30V N Ch NexFET Pwr MOSFET
MOSFET, N-CH, 30V, 100A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):950µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 30V 40A/100A 8VSON
| Texas Instruments | ODG (Origin Data Global) | Rochester Electronics | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD17559Q5 | CSD17559Q5 | CSD17559Q5 | 296-35582-6-ND | 083178-CSD17559Q5 | CSD17559Q5 | 29AH3831 | CSD17559Q5 |
| Product Name | CSD17559Q5 30V N-Channel NexFET? Power MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD17559Q5 | MOSFET | Mosfet, N-Ch, 30V, 100A, 8Son; Transistor Polarity Texas Instruments | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| rDS(on) | 0.0015 ohms | 0.0015 ohms | 9.50E-4 ohms | |||||
| IDSS | 250000 milliamps | 40000 milliamps | 100000 milliamps | |||||
| QG | 39 nC |
