The UMB10N FHA is a dual PNP digital transistor with built-in bias resistors in a UMT6 (SOT-363) package, designed for automotive applications. Each transistor has a maximum collector current of 100 mA and a supply voltage rating of -50 V. The device dissipates up to 150 mW total, with no more than 120 mW per element. Input resistance is 2.2 kΩ, with a resistance ratio of R2/R1 at 21. It features independent transistor elements, AEC-Q101 qualification, and supports mounting on UMT3 automated systems. The package measures 2.0 × 1.25 × 0.9 mm, enabling compact, low-cost mounting with reduced board area.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | UMB10NFHA | UMB10NFHA |
| Product Name | PNP+PNP, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) for automotive | PNP+PNP Digital transistor (Corresponds to AEC-Q101) |
| Polarity | PNP | PNP |
