SCT4062KW7 is a 1200 V, N-channel silicon carbide (SiC) power MOSFET in a TO-263-7L surface-mount package, designed for high-efficiency switching applications such as solar inverters and DC/DC converters. It has a typical on-resistance of 62 mΩ at 25°C and a continuous drain current of 24 A at 25°C, reducing to 17 A at 100°C. The device supports a maximum junction temperature of 175°C and features a thermal resistance junction-to-case of 1.2 to 1.6 K/W. It is RoHS compliant and meets AEC-Q200 qualification standards. The gate drive voltage range is recommended between +15 V and +18 V for turn-on, with turn-off held at 0 V. The package includes a thermal tab and is supplied on 330 mm reels in 1000-piece units with embossed tape.
SCT4062KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT4062KW7 |
| Product Name | 1200V, 24A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET |
| Package Type | TO-263; TO-263-7L |
