SCT4062KRHR is an automotive-grade 1200 V N-channel silicon carbide (SiC) MOSFET in a TO-247-4L package, designed for high-efficiency power switching applications. It has a typical on-resistance of 62 mΩ at 25°C and a continuous drain current rating of 26 A at 25°C, derating to 18 A at 100°C. The device is qualified to AEC-Q101 and features fast switching and low reverse recovery losses, with a recommended gate drive voltage of +15 to +18 V for turn-on. The thermal resistance from junction to case is 0.98 K/W typ. and the maximum junction temperature is 175°C. The package includes separate driver and power source pins, which are not interchangeable.
AEC-Q101 qualified automotive grade product. SCT4062KRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT4062KRHR |
| Product Name | 1200V, 26A, 4-pin?THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive |
| Package Type | TO-247; TO-247-4L |
