ROHM Semiconductor GmbH 1200V, 81A, 3-pin?THD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT4018KE

Description
SCT4018KE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. Advantages of ROHM's 4th Generation SiC MOSFET This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Datasheet
Description
SCT4018KE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. Advantages of ROHM's 4th Generation SiC MOSFET This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Datasheet

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1200V, 81A, 3-pin?THD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT4018KE - ROHM Semiconductor GmbH
Willich, Germany
1200V, 81A, 3-pin?THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT4018KE
1200V, 81A, 3-pin?THD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT4018KE
SCT4018KE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. Advantages of ROHM's 4th Generation SiC MOSFET This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

SCT4018KE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Transistors
Product Number SCT4018KE
Product Name 1200V, 81A, 3-pin?THD, Trench-structure, Silicon-carbide (SiC) MOSFET
Package Type TO-247; TO-247N
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