SCT4018KE is an N-channel silicon carbide (SiC) MOSFET designed for high-efficiency power conversion in applications such as solar inverters, DC/DC converters, and switch mode power supplies. It is packaged in a TO-247N case with a maximum drain-source voltage of 1200 V and a continuous drain current of 81 A at 25°C. The typical on-resistance is 18 mΩ at 25°C, increasing to 36 mΩ at 150°C. The device supports a maximum junction temperature of 175°C and has a thermal resistance from junction to case of 0.37 to 0.48 K/W. It is RoHS compliant and features fast switching, low reverse recovery, and a recommended gate-source drive voltage of +15 to +18 V for turn-on. The device includes an integrated body diode with a reverse recovery charge of 320 nC at 42 A and 800 V.
SCT4018KE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT4018KE |
| Product Name | 1200V, 81A, 3-pin?THD, Trench-structure, Silicon-carbide (SiC) MOSFET |
| Package Type | TO-247; TO-247N |
