SCT3105KW7 is a 1200 V, N-channel silicon carbide (SiC) MOSFET in a TO-263-7L surface-mount package for high-efficiency switching applications such as solar inverters, DC/DC converters, and motor drives. It has a typical on-resistance of 105 mΩ at 25°C and a continuous drain current rating of 23 A at 25°C, derating to 16 A at 100°C. The device supports a maximum junction temperature of 175°C and has a thermal resistance from junction to case of 0.90 to 1.2 K/W. It is RoHS compliant and designed for easy paralleling with fast switching and reverse recovery. The recommended gate drive voltage is 0 V to +18 V.
SCT3105KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT3105KW7 |
| Product Name | 1200V 23A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET |
| Package Type | TO-263; TO-263-7L |
