Nexperia B.V. 60 V, 310 mA N-channel Trench MOSFET 2N7002PW,115

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60 V, 310 mA N-channel Trench MOSFET - 2N7002PW,115 - Nexperia B.V.
Nijmegen, Netherlands
60 V, 310 mA N-channel Trench MOSFET
2N7002PW,115
60 V, 310 mA N-channel Trench MOSFET 2N7002PW,115
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002PW,115 - 1004065-2N7002PW,115 - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002PW,115
1004065-2N7002PW,115
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002PW,115 1004065-2N7002PW,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1004065-2N7002PW,115 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 260mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-323-3 Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 310mA (Ta) Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 0.8nC @ 4.5V Max Input Capacitance: 50pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1004065-2N7002PW,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 260mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-323-3
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 310mA (Ta)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 0.8nC @ 4.5V
Max Input Capacitance: 50pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

Supplier's Site Datasheet
 - 2N7002PW,115 - Rochester Electronics
Newburyport, MA, United States
2N7002 - Small Signal Field-Effect Transistor, 0.31A, 60V, N-Channel MOSFET

2N7002 - Small Signal Field-Effect Transistor, 0.31A, 60V, N-Channel MOSFET

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
2N7002PW,115
Triode/MOS Tube/Transistor >> MOSFETs 2N7002PW,115
60V 310mA 1.6Ω@10V,500mA 260mW 2.4V@250uA N Channel SOT-323-3 MOSFETs ROHS

60V 310mA 1.6Ω@10V,500mA 260mW 2.4V@250uA N Channel SOT-323-3 MOSFETs ROHS

Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N7002PW,115
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N7002PW,115
MOSFET N-CH 60V 310MA SOT323

MOSFET N-CH 60V 310MA SOT323

Supplier's Site
Single FETs, MOSFETs - 1727-4793-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-4793-1-ND
Single FETs, MOSFETs 1727-4793-1-ND
N-Channel 60V 310mA (Ta) 260mW (Ta) Surface Mount SOT-323

N-Channel 60V 310mA (Ta) 260mW (Ta) Surface Mount SOT-323

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-4793-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-4793-2-ND
Single FETs, MOSFETs 1727-4793-2-ND
N-Channel 60V 310mA (Ta) 260mW (Ta) Surface Mount SOT-323

N-Channel 60V 310mA (Ta) 260mW (Ta) Surface Mount SOT-323

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-4793-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-4793-6-ND
Single FETs, MOSFETs 1727-4793-6-ND
N-Channel 60V 310mA (Ta) 260mW (Ta) Surface Mount SOT-323

N-Channel 60V 310mA (Ta) 260mW (Ta) Surface Mount SOT-323

Supplier's Site Datasheet
MOSFET Operating temperature: -55...+150 °C Housing type: SOT-323 Polarity: N Power dissipation: 310 mW - 554-2N7002PW,115 - Utmel Electronic Limited
Hong Kong, China
MOSFET Operating temperature: -55...+150 °C Housing type: SOT-323 Polarity: N Power dissipation: 310 mW
554-2N7002PW,115
MOSFET Operating temperature: -55...+150 °C Housing type: SOT-323 Polarity: N Power dissipation: 310 mW 554-2N7002PW,115
MOSFET Operating temperature: -55...+150 °C Housing type: SOT-323 Polarity: N Power dissipation: 310 mW

MOSFET Operating temperature: -55...+150 °C Housing type: SOT-323 Polarity: N Power dissipation: 310 mW

Supplier's Site
Mosfet,n Channel,60V,0.3A,sot323; Channel Type Nexperia - 84R0970 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet,n Channel,60V,0.3A,sot323; Channel Type Nexperia
84R0970
Mosfet,n Channel,60V,0.3A,sot323; Channel Type Nexperia 84R0970
MOSFET,N CHANNEL,60V,0.3A,SOT 323; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:310mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.75V RoHS Compliant: Yes

MOSFET,N CHANNEL,60V,0.3A,SOT323; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:310mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.75V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Nexperia B.V. Win Source Electronics Rochester Electronics LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited DigiKey Utmel Electronic Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2N7002PW,115 1004065-2N7002PW,115 2N7002PW,115 2N7002PW,115 2N7002PW,115 1727-4793-1-ND 554-2N7002PW,115 84R0970
Product Name 60 V, 310 mA N-channel Trench MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002PW,115 Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs MOSFET Operating temperature: -55...+150 °C Housing type: SOT-323 Polarity: N Power dissipation: 310 mW Mosfet,n Channel,60V,0.3A,sot323; Channel Type Nexperia
MOSFET Operating Mode Enhancement Enhancement; ENHANCEMENT MODE
Package Type SOT323; SOT323 SOT3; SOT323; SOT-323-3 SOT323 SOT323 SOT323; SC-70, SOT-323 SOT323; SC-70, SOT-323 TO-3
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 60 volts 60 volts 60 volts
PD 260 milliwatts 260 milliwatts 310 milliwatts
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