ROHM Semiconductor GmbH 1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive SCT3105KLHR

Description
AEC-Q101 qualified automotive grade product. SCT3105KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Description
AEC-Q101 qualified automotive grade product. SCT3105KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Datasheet
Datasheet Summary
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SCT3105KLHR is an automotive-grade N-channel silicon carbide (SiC) MOSFET designed for high-voltage switching applications. It is packaged in a TO-247N case with a maximum drain-source voltage of 1200 V, a continuous drain current of 24 A at 25°C, and a typical on-resistance of 105 mΩ at 25°C. The device is qualified to AEC-Q101 standards, features a junction temperature range up to 175°C, and is RoHS compliant. Thermal resistance from junction to case is 0.86 to 1.12 K/W.

Datasheet Summary
Powered by GS/AI

SCT3105KLHR is an automotive-grade N-channel silicon carbide (SiC) MOSFET designed for high-voltage switching applications. It is packaged in a TO-247N case with a maximum drain-source voltage of 1200 V, a continuous drain current of 24 A at 25°C, and a typical on-resistance of 105 mΩ at 25°C. The device is qualified to AEC-Q101 standards, features a junction temperature range up to 175°C, and is RoHS compliant. Thermal resistance from junction to case is 0.86 to 1.12 K/W.

Suppliers

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1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive - SCT3105KLHR - ROHM Semiconductor GmbH
Willich, Germany
1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
SCT3105KLHR
1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive SCT3105KLHR
AEC-Q101 qualified automotive grade product. SCT3105KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

AEC-Q101 qualified automotive grade product. SCT3105KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Transistors
Product Number SCT3105KLHR
Product Name 1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
Package Type TO-247; TO-247N
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