The SCT3080KLHR is an automotive-grade, N-channel silicon carbide (SiC) MOSFET in a TO-247N package, designed for high-voltage switching applications such as automotive systems and switch-mode power supplies. It has a drain-source voltage rating of 1200 V, a continuous drain current of 31 A at 25°C, and a typical on-resistance of 80 mΩ at 25°C. The device is qualified to AEC-Q101, features fast switching and reverse recovery, and uses a trench structure for improved performance. The thermal resistance from junction to case is 0.70 to 0.91 K/W, and the maximum junction temperature is 175°C. The part is RoHS compliant with Pb-free lead plating.
AEC-Q101 qualified automotive grade product. SCT3080KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT3080KLHR |
| Product Name | 1200V, 31A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive |
| Package Type | TO-247; TO-247N |
