ROHM Semiconductor GmbH 1200V, 31A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive SCT3080KLHR

Description
AEC-Q101 qualified automotive grade product. SCT3080KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Datasheet
Description
AEC-Q101 qualified automotive grade product. SCT3080KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Datasheet

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1200V, 31A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive - SCT3080KLHR - ROHM Semiconductor GmbH
Willich, Germany
1200V, 31A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
SCT3080KLHR
1200V, 31A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive SCT3080KLHR
AEC-Q101 qualified automotive grade product. SCT3080KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

AEC-Q101 qualified automotive grade product. SCT3080KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Transistors
Product Number SCT3080KLHR
Product Name 1200V, 31A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
Package Type TO-247; TO-247N
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