Nexperia B.V. 60 V N-channel Trench MOSFET 2N7002KQBZ

Description
N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Side wettable flanks for optical solder inspection Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 60 V N-channel Trench MOSFET - 2N7002KQBZ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-2N7002KQBZDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-2N7002KQBZCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-2N7002KQBZTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N7002KQBZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 60V, 0.72A, Dfn1110D Rohs Compliant Nexperia - 85AJ7193 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Side wettable flanks for optical solder inspection Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
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Datasheet
Datasheet Summary
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60 V N-channel Trench MOSFET in an ultra small DFN1110D-3 (SOT8015) leadless SMD plastic package measuring 1.1 x 1 x 0.48 mm. It is logic-level compatible, features side wettable flanks for optical solder inspection, provides ESD protection exceeding 1 kV HBM (Class H1C), and is AEC-Q101 qualified. Maximum continuous drain current is 720 mA at VGS = 10 V and TA = 25 °C, with drain-source on-state resistance ranging from 635 mΩ to 850 mΩ under the same conditions.

Datasheet Summary
Powered by GS/AI

60 V N-channel Trench MOSFET in an ultra small DFN1110D-3 (SOT8015) leadless SMD plastic package measuring 1.1 x 1 x 0.48 mm. It is logic-level compatible, features side wettable flanks for optical solder inspection, provides ESD protection exceeding 1 kV HBM (Class H1C), and is AEC-Q101 qualified. Maximum continuous drain current is 720 mA at VGS = 10 V and TA = 25 °C, with drain-source on-state resistance ranging from 635 mΩ to 850 mΩ under the same conditions.

Suppliers

Company
Product
Description
Supplier Links
60 V N-channel Trench MOSFET - 2N7002KQBZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
60 V N-channel Trench MOSFET
2N7002KQBZ
60 V N-channel Trench MOSFET 2N7002KQBZ
N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Side wettable flanks for optical solder inspection Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Side wettable flanks for optical solder inspection
  • Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C)
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2N7002KQBZDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2N7002KQBZDKR-ND
Single FETs, MOSFETs 1727-2N7002KQBZDKR-ND
N-Channel 60V 720mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3

N-Channel 60V 720mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2N7002KQBZCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2N7002KQBZCT-ND
Single FETs, MOSFETs 1727-2N7002KQBZCT-ND
N-Channel 60V 720mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3

N-Channel 60V 720mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2N7002KQBZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2N7002KQBZTR-ND
Single FETs, MOSFETs 1727-2N7002KQBZTR-ND
N-Channel 60V 720mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3

N-Channel 60V 720mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N7002KQBZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N7002KQBZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N7002KQBZ
2N7002KQB/SOT8015/DF N1110D-3

2N7002KQB/SOT8015/DFN1110D-3

Supplier's Site
Mosfet, N-Ch, 60V, 0.72A, Dfn1110D Rohs Compliant Nexperia - 85AJ7193 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 0.72A, Dfn1110D Rohs Compliant Nexperia
85AJ7193
Mosfet, N-Ch, 60V, 0.72A, Dfn1110D Rohs Compliant Nexperia 85AJ7193
MOSFET, N-CH, 60V, 0.72A, DFN1110D ROHS COMPLIANT: YES

MOSFET, N-CH, 60V, 0.72A, DFN1110D ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2N7002KQBZ 1727-2N7002KQBZDKR-ND 2N7002KQBZ 85AJ7193
Product Name 60 V N-channel Trench MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 60V, 0.72A, Dfn1110D Rohs Compliant Nexperia
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
IDSS 720000 milliamps
VGS(off) 16 volts
PD 420 milliwatts
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