60 V N-channel Trench MOSFET in an ultra small DFN1110D-3 (SOT8015) leadless SMD plastic package measuring 1.1 x 1 x 0.48 mm. It is logic-level compatible, features side wettable flanks for optical solder inspection, provides ESD protection exceeding 1 kV HBM (Class H1C), and is AEC-Q101 qualified. Maximum continuous drain current is 720 mA at VGS = 10 V and TA = 25 °C, with drain-source on-state resistance ranging from 635 mΩ to 850 mΩ under the same conditions.
N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 60V 720mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3
N-Channel 60V 720mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3
N-Channel 60V 720mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3
MOSFET, N-CH, 60V, 0.72A, DFN1110D ROHS COMPLIANT: YES
2N7002KQB/SOT8015/DF
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2N7002KQBZ | 1727-2N7002KQBZDKR-ND | 85AJ7193 | 2N7002KQBZ |
| Product Name | 60 V N-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 0.72A, Dfn1110D Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 60 volts | |||
| IDSS | 720000 milliamps | |||
| VGS(off) | 16 volts | |||
| PD | 420 milliwatts |
