The SCT3080KL is a 1200 V N-channel silicon carbide power MOSFET in a TO-247N package, designed for high-efficiency switching applications such as solar inverters, DC/DC converters, and motor drives. It has a typical on-resistance of 80 mΩ at 25°C and a continuous drain current rating of 31 A at 25°C, decreasing to 22 A at 100°C. The device supports a pulsed drain current of 77 A with a maximum junction temperature of 175°C and thermal resistance from junction to case of 0.70 to 0.91 K/W. Its gate-source voltage range is -4 V to +22 V, with a recommended drive voltage of 0 V/+18 V. The MOSFET is RoHS compliant and features fast switching and reverse recovery characteristics. The body diode has a continuous forward current rating of 31 A and reverse recovery time of 17 ns under specified conditions.
SCT3080KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3080KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Power MOSFET |
| Product Number | SCT3080KL | SCT3080KL |
| Product Name | 1200V, 31A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET | N-channel Silicon Carbide Power MOSFET |
| Package Type | TO-247; TO-247N | TO-247 |
| Transistor Grade / Operating Range | Commercial | Commercial |
| Transistor Technology / Material | Silicon Carbide | |
| V(BR)DSS | 1200 volts | |
| rDS(on) | 0.0800 ohms |
