The SCT3040KW7 is a 1200 V, N-channel silicon carbide (SiC) MOSFET in a TO-263-7L package, designed for high-efficiency power conversion applications such as solar inverters, DC/DC converters, and motor drives. It has a typical on-resistance of 40 mΩ at 25°C and a continuous drain current of 56 A at 25°C case temperature, reducing to 39 A at 100°C. The device supports a maximum junction temperature of 175°C and has a thermal resistance from junction to case of 0.44 to 0.56 K/W. It is RoHS compliant and features fast switching and reverse recovery, with a total gate charge of 107 nC and a body diode reverse recovery charge of 535 nC. The gate-source voltage range is -4 V to +22 V, with a recommended drive voltage of 0 V/+18 V.
SCT3040KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT3040KW7 |
| Product Name | 1200V 56A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET |
| Package Type | TO-263; TO-263-7L |
