Infineon Technologies AG 2EDL8033G4BXTMA1

Description
Half Bridge Based MOSFET Driver
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Description
Half Bridge Based MOSFET Driver
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Datasheet
Datasheet Summary
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The 2EDL8033-G4B is a high-side and low-side gate driver IC designed for half-bridge configurations, capable of sourcing 3 A and sinking 6 A with a 120 V bootstrap voltage rating. It features integrated bootstrap diode, TTL-compatible inputs with -10 V to 20 V input voltage tolerance, and undervoltage lockout on both channels. Available in a PG-VDSON-8-5 package measuring 4 mm x 4 mm, it operates from -40°C to 125°C junction temperature and meets JEDEC J-STD-47/20/22 industrial qualification standards. Its typical propagation delay is under 35 ns with 2 ns delay matching between channels.

Datasheet Summary
Powered by GS/AI

The 2EDL8033-G4B is a high-side and low-side gate driver IC designed for half-bridge configurations, capable of sourcing 3 A and sinking 6 A with a 120 V bootstrap voltage rating. It features integrated bootstrap diode, TTL-compatible inputs with -10 V to 20 V input voltage tolerance, and undervoltage lockout on both channels. Available in a PG-VDSON-8-5 package measuring 4 mm x 4 mm, it operates from -40°C to 125°C junction temperature and meets JEDEC J-STD-47/20/22 industrial qualification standards. Its typical propagation delay is under 35 ns with 2 ns delay matching between channels.

Suppliers

Company
Product
Description
Supplier Links
 - 2EDL8033G4BXTMA1 - Rochester Electronics
Newburyport, MA, United States
Half Bridge Based MOSFET Driver

Half Bridge Based MOSFET Driver

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2EDL8033G4BXTMA1
Package Type PG-VDSON-8
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