Infineon Technologies AG 2ED2108S06FXUMA1

Description
Half Bridge Based IGBT/MOSFET Driver
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Description
Half Bridge Based IGBT/MOSFET Driver
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Datasheet
Datasheet Summary
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The 2ED2108S06FXUMA1 is a 650 V half-bridge gate driver with an integrated bootstrap diode, designed for driving IGBTs and MOSFETs in motor drives, inverters, and power supplies. It comes in a DSO-8 package and operates with a supply voltage ranging from 10 V to 20 V. The device features a maximum output current of 0.29 A sink and 0.7 A source, a fixed internal deadtime of 540 ns, and delay matching of 35 ns max. It supports logic inputs compatible with 3.3 V, 5 V, and 15 V standards, has independent under-voltage lockout for both channels, and is qualified for industrial applications per JEDEC JESD47/20/22.

Datasheet Summary
Powered by GS/AI

The 2ED2108S06FXUMA1 is a 650 V half-bridge gate driver with an integrated bootstrap diode, designed for driving IGBTs and MOSFETs in motor drives, inverters, and power supplies. It comes in a DSO-8 package and operates with a supply voltage ranging from 10 V to 20 V. The device features a maximum output current of 0.29 A sink and 0.7 A source, a fixed internal deadtime of 540 ns, and delay matching of 35 ns max. It supports logic inputs compatible with 3.3 V, 5 V, and 15 V standards, has independent under-voltage lockout for both channels, and is qualified for industrial applications per JEDEC JESD47/20/22.

Suppliers

Company
Product
Description
Supplier Links
 - 2ED2108S06FXUMA1 - Rochester Electronics
Newburyport, MA, United States
Half Bridge Based IGBT/MOSFET Driver

Half Bridge Based IGBT/MOSFET Driver

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 2ED2108S06FXUMA1
Package Type SO-8; PG-DSO-8
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