RSQ020N03 is an N-channel 30V MOSFET designed for switching applications, housed in a TSMT6 surface-mount package. It has a continuous drain current rating of ±2.0A and a maximum power dissipation of 1.25W. The device features a maximum on-resistance of 134mΩ at 10V gate bias and 2.0A drain current, and includes a built-in gate-source protection diode. It is RoHS compliant and operates over a junction temperature range of -55°C to +150°C.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RSQ020N03 | RSQ020N03 |
| Product Name | Nch 30V 2A Small Signal MOSFET | 4V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| Package Type | TSMT6 | SOT-457 |
| Transistor Grade / Operating Range | Commercial | |
| V(BR)DSS | 30 volts |
