Dual N-Channel NexFET? Power MOSFET 12-DSBGA -55 to 150
Manufacturer: Texas Instruments
Win Source Part Number: 101529-CSD86311W1723
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 12-DSBGA (1.53x1.98)
Maximum Power Dissipation: 1.5W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 4nC @ 4.5V
Max Input Capacitance: 585pF @ 12.5V
Maximum Rds On at Id,Vgs: 39 mOhm @ 2A, 8V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Power Field-Effect Transistor, 4.5A I(D), 25V, 0.051ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
25V 4.5A 29mR N-CH BGA Power Module Product overview: CSD86311W1723 from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 4.5A, BGA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 4.5A, BGA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-CSD86311W1723 can be used for catalog matching and distributor lookup.
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| Texas Instruments | Win Source Electronics | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD86311W1723 | 101529-CSD86311W1723 | CSD86311W1723 | 289-CSD86311W1723 | 296-27599-1-ND | CSD86311W1723 | CSD86311W1723 |
| Product Name | CSD86311W1723 Dual N-Channel NexFET? Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD86311W1723 | 25V 4.5A BGA MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 25 volts | 25 volts | |||||
| rDS(on) | 0.0420 ohms | 0.0510 ohms | |||||
| IDSS | 4500 milliamps | ||||||
| QG | 3.1 nC |
