The ALD110902PAL is a dual N-channel enhancement mode MOSFET array in an 8-pin plastic dual in-line package (PDIP), designed for precision low-voltage, low-power analog applications. It features a matched gate threshold voltage of +0.20V with a tolerance of ±0.02V, a typical input impedance of 10¹²Ω, and gate leakage current of 30pA at 25°C. The devices exhibit tight matching with offset voltage as low as 10mV and temperature coefficient of threshold voltage at -1.7mV/°C. Operating within a 0°C to +70°C temperature range, the MOSFETs support drain-source voltages up to 10.6V and power dissipation up to 500mW. The package dimensions are specified as 9.40mm to 11.68mm in length and 5.59mm to 7.11mm in width. The part is lead-free and complies with RoHS standards.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 500mW Through Hole 8-PDIP
MOSFET 2N-CH 10.6V 8DIP
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD110902PAL | 1014-1034-ND | ALD110902PAL |
| Product Name | EVICES, INC. QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | ||
| V(BR)DSS | 10 volts | ||
| IDSS | 3 milliamps |
