MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 210888-RSM002N06
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: VMT3
Dimension: SOT-723
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 250mA (Ta)
Gate-Source Threshold Voltage: 2.3V @ 1mA
Max Input Capacitance: 15pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.4 Ohm @ 250mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
MOSFET N-CH 60V 0.25A VMT3 Product overview: RSM002N06 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.25A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.25A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RSM002N06 can be used for catalog matching and distributor lookup.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RSM002N06 | RSM002N06 | 210888-RSM002N06 | 285-RSM002N06 |
| Product Name | 2.5V Drive Nch MOSFET | 2.5V Drive Nch MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSM002N06 | 60V 0.25A MOSFET Transistor |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel |
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |
| IDSS | 250 milliamps | 250 milliamps | ||
| PD | 150 milliwatts | 150 milliwatts | 150 milliwatts | 150 milliwatts |
