The RSJ400N10 is an N-channel 100V power MOSFET designed for switching applications, housed in a TO-263S (SC-83) package. It has a continuous drain current of ±40A, a maximum on-resistance of 27mΩ at V_GS=10V and I_D=20A, and a power dissipation rating of 50W. The device supports a pulsed drain current of ±80A and has a single-pulse avalanche energy of 73mJ. It features a junction temperature range of -55°C to +150°C, thermal resistance junction-to-case of 2.5°C/W, and is RoHS compliant. The gate threshold voltage ranges from 1.0V to 2.5V, with a typical total gate charge of 90nC. Input, output, and reverse transfer capacitances are 3600pF, 270pF, and 180pF respectively at specified conditions. The part is supplied in tape and reel packaging with a reel size of 330mm and a tape width of 24mm.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RSJ400N10 | RSJ400N10 |
| Product Name | Nch 100V 40A Power MOSFET | 4V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 100 volts | 100 volts |
| IDSS | 40000 milliamps | 40000 milliamps |
| QG | 90 nC | |
| PD | 50000 milliwatts | 50000 milliwatts |
