ROHM Semiconductor GmbH Nch 100V 60A, HSOP8, Power MOSFET RS6P060BH

Description
RS6P060BH is a power MOSFET with low-on resistance and High power small mold package, suitable for switching.
Description
RS6P060BH is a power MOSFET with low-on resistance and High power small mold package, suitable for switching.
Datasheet
Datasheet Summary
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RS6P060BH is an N-channel 100V 60A power MOSFET in an HSOP8 package, designed for switching applications. It has a maximum drain-source on-state resistance of 10.6mΩ at 10V gate-source voltage and 60A drain current, and can handle a continuous drain current of ±60A with a maximum power dissipation of 73W. The device is housed in an HSOP8 package, features RoHS compliance and halogen-free construction, and is rated for a junction temperature range of -55°C to +150°C. It is 100% Rg and UIS tested.

Datasheet Summary
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RS6P060BH is an N-channel 100V 60A power MOSFET in an HSOP8 package, designed for switching applications. It has a maximum drain-source on-state resistance of 10.6mΩ at 10V gate-source voltage and 60A drain current, and can handle a continuous drain current of ±60A with a maximum power dissipation of 73W. The device is housed in an HSOP8 package, features RoHS compliance and halogen-free construction, and is rated for a junction temperature range of -55°C to +150°C. It is 100% Rg and UIS tested.

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Nch 100V 60A, HSOP8, Power MOSFET - RS6P060BH - ROHM Semiconductor GmbH
Willich, Germany
Nch 100V 60A, HSOP8, Power MOSFET
RS6P060BH
Nch 100V 60A, HSOP8, Power MOSFET RS6P060BH
RS6P060BH is a power MOSFET with low-on resistance and High power small mold package, suitable for switching.

RS6P060BH is a power MOSFET with low-on resistance and High power small mold package, suitable for switching.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number RS6P060BH
Product Name Nch 100V 60A, HSOP8, Power MOSFET
Polarity N-Channel
V(BR)DSS 100 volts
IDSS 60000 milliamps
QG 16.2 nC
PD 73000 milliwatts
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