ROHM Semiconductor GmbH Pch -30V -4.5A Small Signal MOSFET RQ6E045RP

RQ6E045RP is a P-channel MOSFET designed for switching applications, with a drain-source voltage rating of -30V and a continuous drain current of -4.5A. It features a built-in gate-source protection diode and low on-resistance, with a maximum RDS(on) of 35mΩ at -10V gate-source voltage. The device is packaged in a TSMT6 surface-mount case, rated for a maximum power dissipation of 1.25W and a junction temperature up to 150°C. It is RoHS compliant and meets the thermal resistance of 100°C/W (junction-to-ambient) when mounted on a ceramic board. The gate threshold voltage ranges from -1.0V to -2.5V.