100 V N-channel NexFET power MOSFET in a SON 5 mm × 6 mm package, designed for power conversion applications. Drain-to-source on-resistance is 5.3 mΩ at VGS = 10 V and 6.0 mΩ at VGS = 6 V. Gate charge total is 37 nC at 10 V, with gate-to-drain charge of 6.6 nC. Continuous drain current is 100 A (package limited) and 110 A (silicon limited) at TC = 25°C. Pulsed drain current is 337 A. Junction-to-case thermal resistance is 1.0 °C/W, and operating junction temperature range is -55 °C to 150 °C. Avalanche energy rating is 180 mJ at ID = 60 A. RoHS compliant and halogen free. Meets AEC-Q200 qualifications.
100V, 5.3mOhm, SON5x6 NexFET™ Power MOSFET 8-VSONP -55 to 150
N-Channel 100V 100A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6)
N-Channel 100V 100A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6)
N-Channel 100V 100A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6)
Manufacturer: Texas Instruments
Win Source Part Number: 1163534-CSD19531Q5A
Family Name: CSD19531Q5A
Manufacturer Homepage: www.ti.com
Alternative Parts (Cross-Reference): SiR846ADP-T1-GE3; BSC070N10NS5ATMA1; SiR870DP-T1-GE3; TPH4R50ANH;
Introduction Date: September 27, 2013
Estimated EOL Date: 2031
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
100V N-Ch MOSFET, 6.4mΩ, 150°C, 5-Pin SON Product overview: CSD19531Q5A from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD19531Q5A can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 100A 8VSON
MOSFET, N CHANNEL, 100V, 100A, SON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power RoHS Compliant: Yes
MOSFET N-CH 100V 100A 8VSON
| Texas Instruments | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD19531Q5A | 296-41232-2-ND | 1163534-CSD19531Q5A | 2088483 | 2088485P | 278-CSD19531Q5A | CSD19531Q5A | CSD19531Q5A | 29AH3845 | CSD19531Q5A |
| Product Name | CSD19531Q5A 100V, 5.3mOhm, SON5x6 NexFET™ Power MOSFET | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19531Q5A | MOSFETs | MOSFETs | 100V MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 100V, 100A, Son-8; Transistor Polarity Texas Instruments | Single FETs, MOSFETs |
| V(BR)DSS | 100 volts | 100 volts | ||||||||
| IDSS | 100000 milliamps | 100000 milliamps | 100000 milliamps | |||||||
| QG | 37 nC | |||||||||
| Package Type | SON5x6 | 8-PowerTDFN | SOT3 | Vsonp | VSONP | 8-PowerTDFN | TO-3 | 8-PowerTDFN | ||
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel |
