ROHM Semiconductor GmbH Automotive Nch 190V 10A Power MOSFET RD3S100AAFRA

The RD3S100AAFRA is an N-channel 190 V, 10 A power MOSFET designed for switching power supplies, housed in a DPAK (TO-252) package. It has a maximum on-resistance of 182 mΩ at 10 V gate voltage and 5 A drain current, with a continuous drain current rating of ±10 A and power dissipation of 85 W at 25°C. The device is AEC-Q101 qualified and RoHS compliant, with a junction temperature range of -55°C to +150°C and thermal resistance from junction to case of 1.46 °C/W. Gate threshold voltage ranges from 0.5 V to 2.5 V, and total gate charge is 52 nC. The package is supplied on 2500-piece embossed tape.