ROHM Semiconductor GmbH Nch 100V 10A Power MOSFET RD3P100SN

Description
RD3P100SN is a Power MOSFET with Low on-resistance, suitable for Switching.
Description
RD3P100SN is a Power MOSFET with Low on-resistance, suitable for Switching.
Datasheet
Datasheet Summary
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RD3P100SN is an N-channel 100V power MOSFET designed for switching applications, housed in a DPAK (TO-252) package with a continuous drain current of ±10A and a maximum on-resistance of 133mΩ at 10V gate voltage. It supports a power dissipation of 20W, has a junction temperature range of -55°C to +150°C, and is RoHS compliant. The device features low gate charge, fast switching speed, and parallel operation capability.

Datasheet Summary
Powered by GS/AI

RD3P100SN is an N-channel 100V power MOSFET designed for switching applications, housed in a DPAK (TO-252) package with a continuous drain current of ±10A and a maximum on-resistance of 133mΩ at 10V gate voltage. It supports a power dissipation of 20W, has a junction temperature range of -55°C to +150°C, and is RoHS compliant. The device features low gate charge, fast switching speed, and parallel operation capability.

Suppliers

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Nch 100V 10A Power MOSFET - RD3P100SN - ROHM Semiconductor GmbH
Willich, Germany
Nch 100V 10A Power MOSFET
RD3P100SN
Nch 100V 10A Power MOSFET RD3P100SN
RD3P100SN is a Power MOSFET with Low on-resistance, suitable for Switching.

RD3P100SN is a Power MOSFET with Low on-resistance, suitable for Switching.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number RD3P100SN
Product Name Nch 100V 10A Power MOSFET
Polarity N-Channel
V(BR)DSS 100 volts
IDSS 10000 milliamps
QG 18 nC
PD 20000 milliwatts
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