ROHM Semiconductor GmbH Nch 60V 80A Power MOSFET RD3L08BGN

Description
RD3L08BGN is a power MOSFET, suitable for switching applications.
Description
RD3L08BGN is a power MOSFET, suitable for switching applications.
Datasheet
Datasheet Summary
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RD3L08BGN is an N-channel 60V power MOSFET designed for switching applications in a TO-252 (DPAK) package. It has a continuous drain current rating of ±80A and a maximum on-state resistance of 5.5mΩ at 10V gate-source voltage. The device dissipates up to 119W and operates with a junction temperature range of -55°C to +150°C. It is RoHS compliant, halogen-free, and features 100% Rg and UIS testing. Thermal resistance from junction to case is 1.05°C/W. The part is supplied in tape and reel packaging with a reel size of 330mm and a quantity of 2500 pieces per reel.

Datasheet Summary
Powered by GS/AI

RD3L08BGN is an N-channel 60V power MOSFET designed for switching applications in a TO-252 (DPAK) package. It has a continuous drain current rating of ±80A and a maximum on-state resistance of 5.5mΩ at 10V gate-source voltage. The device dissipates up to 119W and operates with a junction temperature range of -55°C to +150°C. It is RoHS compliant, halogen-free, and features 100% Rg and UIS testing. Thermal resistance from junction to case is 1.05°C/W. The part is supplied in tape and reel packaging with a reel size of 330mm and a quantity of 2500 pieces per reel.

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Nch 60V 80A Power MOSFET - RD3L08BGN - ROHM Semiconductor GmbH
Willich, Germany
Nch 60V 80A Power MOSFET
RD3L08BGN
Nch 60V 80A Power MOSFET RD3L08BGN
RD3L08BGN is a power MOSFET, suitable for switching applications.

RD3L08BGN is a power MOSFET, suitable for switching applications.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number RD3L08BGN
Product Name Nch 60V 80A Power MOSFET
Polarity N-Channel
V(BR)DSS 60 volts
IDSS 80000 milliamps
QG 38 nC
PD 119000 milliwatts
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