The HP8M51 is a 100V N-channel and P-channel power MOSFET integrated in a single HSOP8 surface mount package for switching applications. It has a continuous drain current of ±4.5A and a maximum power dissipation of 7.0W. The N-channel MOSFET has a maximum on-resistance of 170mΩ at 10V gate drive, while the P-channel has 290mΩ at -10V gate drive. The device is RoHS compliant and halogen free, with a junction temperature range of -55″C to +150″C and thermal resistance from junction to ambient of 41.7″C/W when mounted on a 40×40×0.8mm copper board.
HP8M51TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | HP8M51 |
| Product Name | 100V Nch+Pch Power MOSFET |
| Polarity | N-Channel; P-Channel |
| V(BR)DSS | 100 volts |
| IDSS | 4500 milliamps |
| QG | 8.5 nC |
| PD | 7000 milliwatts |
