ROHM Semiconductor USA, LLC TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTC114ESATP DTC114ESATP

Manufacturer: Rohm Semiconductor
Win Source Part Number: 133833-DTC114ESATP
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 250MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SPT
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 30 @ 5mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

TRANS PREBIAS NPN 50V 0.05A SPT Product overview: DTC114ESATP from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.05A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.05A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DTC114ESATP can be used for catalog matching and distributor lookup.

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Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 50mA 250MHz 300mW Through Hole SPT